Аннотация:
The safety and reliability of the operation of materials on which modern cyber systems are developed and
new autonomous cyber devices are created that are capable of performing tasks in modern combat
conditions was considered. Mathematical modeling of critical phenomena in semiconductor solid solutions
of elements of groups III – V of the periodic system under various operating conditions was performed. The
properties of the AxB1-xCyD1-y type semiconductor solid solutions were predicted. The spaces, in which the
conditions of stable and unstable phases are satisfied, as well as areas of coexistence of several phases
simultaneously, were determined on sections of phase diagrams. A computer modeling technique for the
formation of critical spaces, based on the use of a differential topological approach in complex
multicomponent systems, was used. A method for determining the total derivatives of the free energy of
quaternary solid solutions with mixing in two sublattices from the third to the eighth inclusive using the
regular solution model and standard thermodynamic functions for binary compounds was applied to
describe the interaction of atoms in multicomponent solid solutions.Sections of the phase diagram of the InGa-As-P system, critical spaces and phase coexistence spaces in four-dimensional space for various
temperatures were calculated. The possibility of forming regions of coexistence of phases of different orders
in solid solutions InxGa1-xAsyP1-y is shown by the obtained modeling results. The results obtained are
consistent with the available experimental data, in which spatial modulation of the composition of the solid
solution was observed.
