Аннотация:
HfO2-Nd2O3 dielelectric films were produced by vacuum electron-beam evaporation, and their electrical properties where studies as a function of composition. C-V measurements were used to calculate parameters of the films and semiconductor-dielectric interfaces. The films exhibit high thermal stability in electric fields, The effect of stabilizing treatment on the optical properties of the films is examined. The films are believed to have great potential for use in thin-film electroluminescent devices and thermally stable capacitors.
