Electrical and Optical Properties of HfO2-Nd2O3 Dielectric Films

Sukharev, Yu.G.; Akulyushin, I.L.; Zherevchuk, V.V.; Savel'ev, A.A.; Andriyanov, A.V.; Mironov, V.S.; Polyarush, O.V.

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dc.contributor.author	Sukharev, Yu.G.
dc.contributor.author	Akulyushin, I.L.
dc.contributor.author	Zherevchuk, V.V.
dc.contributor.author	Savel'ev, A.A.
dc.contributor.author	Andriyanov, A.V.
dc.contributor.author	Mironov, V.S.
dc.contributor.author	Polyarush, O.V.
dc.date.accessioned	2019-11-25T07:45:20Z
dc.date.available	2019-11-25T07:45:20Z
dc.date.issued	1997-12
dc.identifier.citation	Electrical and Optical Properties of HfO2-Nd2O3 Dielectric Films / Yu. G. Sukharev, I. L. Akulyushin, V. V. Zherevchuk, A. A. Savel`ev, A. A. Andriyanov, V. S. Mironov, O. V. Polyarush // Inorganic Materials. - 1997. - Vol. 33, N 12. - P. 1254-1257.	en
dc.identifier.uri	http://dspace.opu.ua/jspui/handle/123456789/9638
dc.description.abstract	HfO2-Nd2O3 dielelectric films were produced by vacuum electron-beam evaporation, and their electrical properties where studies as a function of composition. C-V measurements were used to calculate parameters of the films and semiconductor-dielectric interfaces. The films exhibit high thermal stability in electric fields, The effect of stabilizing treatment on the optical properties of the films is examined. The films are believed to have great potential for use in thin-film electroluminescent devices and thermally stable capacitors.	en
dc.language.iso	en	en
dc.publisher	МАИК Наука/Interperiodica Publishing	en
dc.subject	dielectric films, HfO2-Nd2O3, electrical, optical properties	en
dc.title	Electrical and Optical Properties of HfO2-Nd2O3 Dielectric Films	en
dc.type	Article in Scopus	en
opu.citation.journal	Inorganic Materials	en
opu.citation.volume	33	en
opu.citation.firstpage	1254	en
opu.citation.lastpage	1257	en
opu.citation.issue	12	en
opu.staff.id	aav@opu.ua	en